Overview

Description

This device is part of a series of downconverting mixers covering all UTRA bands. The IDT F1100 dual channel device operates with a single 5V supply.  It is optimized for operation in a Multi-carrier BaseStation Receiver for RF bands from 698 to 915 MHz with High Side Injection.  IF frequencies from 150 to 450 MHz are supported. Nominally, the device offers +41 dBm Output IP3 with 350 mA of ICC.

A member of IDT’s Zero-Distortion™ family, this RF to IF mixer reduces distortion for improved SNR while simultaneously reducing power consumption.

Features

  • Dual path for diversity systems
  • Ideal for multi-carrier systems
  • MIMO friendly:  -6 dBm min LO drive
  • 9 dB Gain
  • Ultra linear: +41 dBm IP3O (350 MHz IF)
  • Low NF ~10 dB
  • 200 Ω output impedance
  • Ultra high +13 dBm P1dBI
  • Pin Compatible with existing solutions
  • 6x6 36 pin package
  • Power Down mode
  • Standard Mode:   ICC = 350 mA

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 1.54 MB
Guide PDF 2.24 MB
Product Brief PDF 1.12 MB
Product Change Notice PDF 39 KB
Product Change Notice PDF 22 KB
Product Change Notice PDF 35 KB
Product Change Notice PDF 33 KB
7 items

Design & Development

Available Modular Designs by X-Microwave: XM-A7D9-0409D Mixer

Models

IDT RF Product Benefits Overview

Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.

Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.

Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.

Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.

In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.