Renesas is a leading dual-port SRAM (DPRAM) supplier, bringing systems design experience together with high-performance circuit and multiport SRAM technology expertise to define synchronous and asynchronous dual-port and four-port memory products.

The Renesas synchronous dual-port SRAM devices are memory devices with clocked inputs and outputs for data, address, and control functions. These DPRAMs provide simultaneous access to a single static SRAM memory location from two buses with full synchronous operation on both ports.

  • DPRAM increases bandwidth (~2x SRAM)
  • DPRAM offers shorter time-to-market than alternatives
  • DPRAM reduces design complexity

Renesas DPRAM products feature simultaneous access capability, with a number of arbitration techniques available to the designer to prevent contention and system wait states. Semaphore token passing, software arbitration, and on-chip hardware arbitration enable the designer to select the most efficient DPRAM for the application.

The Renesas dual-port SRAMs come in industry-standard packages both Green (6/6 RoHS Compliant) and standard, 2.5V to 5V I/O voltages, and commercial, industrial, and military grades. Renesas is continually working to reduce the cost of high-performance dual-port SRAM solutions and will continue to be the leading provider of dual-port SRAM in the semiconductor industry.

About Dual-Port SRAM (DPRAM)

Dual-port SRAM memory (also referred to as DPRAM) is a type of static random access memory that supports multiple, simultaneous reads or writes at different addresses within the memory. This is different than single-port memory which only allows one access at a time. The main benefit of this feature is higher performance since DPRAM allows for two memory cells to be read/written during each clock cycle instead of just one.

The transistor-level architecture of dual-port SRAM uses an eight-transistor basic memory cell, whereas single-port RAM uses a six-transistor basic memory cell. While this generally results in a larger die size, the Renesas synchronous SRAM solutions are optimized and offered in very compact packages.

Key parameters for choosing a dual-port SRAM include:

  • Memory density: This is the number of bits the DPRAM will hold in its memory. Renesas offers sizes up to 36Mb.
  • Bus width: The number of “lanes” used to read and write to the dual-port SRAM. Renesas offers all popular configurations.
  • I/O frequency: The supported frequencies for the clocking signals. Renesas supports frequencies up to 200MHz.
  • Output type: The method in which the memory data is output from the DPRAM. Renesas offers both flowthrough and pipelined options.
  • Core voltage: The supply voltage used to power the dual-port SRAM. This is typically defined by the power rails available in the system.
  • I/O voltage: The voltage used for the data input and output, for some devices this is separate from the core devices.

Documentation

Type Title Date
Overview PDF 890 KB
Overview PDF 603 KB
Overview PDF 3.89 MB
Guide PDF 93 KB
4 items

Tools & Resources