概览

简介

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

特性

  • Low on-state resistance RDS(on) = 35 mΩ MAX. (VGS = 10 V, ID = 8 A)
  • Low Ciss: Ciss = 400 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Gate to Source ESD protection diode built in
  • Designed for automotive application and AEC-Q101 qualified

产品对比

应用

文档

类型 文档标题 日期
数据手册 PDF 335 KB
应用文档 PDF 3.23 MB 日文
指南 PDF 1.71 MB
Product Reliability Report PDF 218 KB
手册 PDF 2.24 MB
5 items

设计和开发

模型