概览

简介

F1129 系列是一系列单端输入/差分输出 1400MHz 至 6000MHz 高增益射频放大器。
 
F1129 系列设计为使用标称 70mA ICC 的 5V 单电源工作。 当使用 5V 电源电压时,F1129 变体可在 3600MHz 频率下提供 18dB 典型增益、2.2dB 噪声系数和 +32dBm OIP3。
 
 

特性

  • 射频范围:1400MHz 至 6000MHz
    • F1129LB 型号:1400MHz 至 3200MHz
    • F1129MB 型号:3000MHz 至 4200MHz
    • F1129HB 型号:4000MHz 至 6000MHz
  • 增益 = 18dB(3600MHz 时)
  • 噪声系数 = 2.2dB(3600MHz 时)
  • OIP3 = +32dBm(3600MHz 时)
  • 输出 P1dB = +18dBm(3600 MHz 时)
  • ICC = 70mA(5V)
  • 2mA 待机电流
  • 50Ω 单端输入阻抗
  • 100Ω 差分输出阻抗

产品对比

应用

文档

类型 文档标题 日期
数据手册 登录后下载 PDF 1014 KB
指南 PDF 2.24 MB
数据手册 登录后下载 PDF 987 KB
产品简述 PDF 983 KB
4 items

设计和开发

模型

IDT RF Product Benefits Overview

Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.

Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.

Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.

Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.

In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.