.SUBCKT  M2SJ325 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation                      *
*         All Rights Reserved                           *
*Commercial Use or Resale Restricted          *
**************************************
* Model generated on Decenber 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 PMOS W=543200u L=1.53u
DDS   1  3    DDS
CGS   5  3    1.192E-10
RG    2  5    4.8
RD    1  4    RTEMP 7.27E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  0    DD1
DDG2  8  7    DD1
EGD1  9  0 8 0 1
EGD2 10  0 7 8 1
COX  10 11    1.55702E-9
DCRR 9  11    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  PMOS       PMOS  (LEVEL  = 3               TOX    = 500E-10
+ XJ     = 0.70E-6         LD     = 0
+ TPG    = 1               RS     = 8.4E-3         RD     = 44.2E-3
+ NSUB   = 5.60E16         IS     = 0
+ UO     = 600             KAPPA  = 1.0
+ NFS    = 0.55E12         THETA  = 0
+ KP     = 13.1E-6         PHI    = 0.85                  
+ CGSO   = 0               CGDO   = 0                  CGBO   = 0)
*************************************************************************
.MODEL DDS D (CJO=8.52894E-10 VJ=1.027685267 M=0.396144939
+RS=0.015970495 IS=1.000E-10 TT=50.0E-9 N=1.172290832 BV=40)
*************************************************************************
.MODEL DDG D (CJO=1.11705E-9 VJ=0.867779628 M=0.56135433 IS=1E-32 N=50 FC=1E-8)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.029070125 TC2=4.54741E-5)
*************************************************************************
.ENDS M2SJ325
