.SUBCKT  M2SJ327 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation                      *
*         All Rights Reserved                           *
*Commercial Use or Resale Restricted          *
**************************************
* Model generated on Decenber 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 PMOS W=540000u L=1.53u
DDS   1  3    DDS
CGS   5  3    1.399E-10
RG    2  5    4.32
RD    1  4    RTEMP 27.04488E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  0    DD1
DDG2  8  7    DD1
EGD1  9  0 8 0 1
EGD2 10  0 7 8 1
COX  10 11    1.71456E-9
DCRR 9  11    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  PMOS       PMOS  (LEVEL  = 3               TOX    = 500E-10
+ XJ     = 0.70E-6         LD     = 0
+ TPG    = 1               RS     = 8.4E-3         RD     = 52.3E-3
+ NSUB   = 5.85E16         IS     = 0
+ UO     = 600             KAPPA  = 0.2
+ NFS    = 0.40E12         THETA  = 0.05
+ KP     = 15.0E-6         PHI    = 0.84                  
+ CGSO   = 0               CGDO   = 0                  CGBO   = 0)
*************************************************************************
.MODEL DDS D (CJO=7.55408E-10 VJ=0.43 M=0.39455131
+RS=0.02002929 IS=1.000E-10 TT=85.0E-9 N=1.243090051 BV=70)
*************************************************************************
.MODEL DDG D (CJO=8.68603E-10 VJ=0.43 M=0.52459209 IS=1E-32 N=50 FC=1E-8)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.014557482 TC2=1.84845E-5)
*************************************************************************
.ENDS M2SJ327
