.SUBCKT 2SJ621 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation        *
*         All Rights Reserved        *
*Commercial Use or Resale Restricted *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 PMOS W=918172u L=0.35u
DDS   1  3    DDS
CGS   5  3    1.251E-10
RG    2  5    140
RD    1  4    RTEMP 8.023398E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  0    DD1
DDG2  8  7    DD1
EGD1  9  0 8 0 1
EGD2 10  0 7 8 1
COX  10 11    8.08784E-10
DCRR 9  11    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  PMOS       PMOS  (LEVEL  = 3               TOX    = 180E-10
+ XJ     = 0.915E-6       LD     = 0
+ TPG    = 1              RS     = 9.0E-3          RD     = 9.8E-3
+ NSUB   = 2.65E17        IS     = 0
+ UO     = 600
+ NFS    = 0.50E12        THETA  = 0.0
+ ETA    = 0              KAPPA  = 0.5
+ KP     = 13.0E-6        PHI    = 0.91
+ CGSO   = 0              CGDO   = 0               CGBO   = 0)
*************************************************************************
.MODEL DDS D (CJO=1.80142E-10 VJ=1.947633229 M=0.507058641
+RS=0.021155471 IS=1.00E-10 TT=110E-9 N=1.23434125 BV=21)
*************************************************************************
.MODEL DDG D (CJO=3.18795E-10 VJ=0.444953609 M=0.378316085 IS=1E-32 N=50 FC=1E-8)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.009112446 TC2=1.37052E-5)
*************************************************************************
.ENDS 2SJ621
