.SUBCKT 2SJ624 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation        *
*         All Rights Reserved        *
*Commercial Use or Resale Restricted *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 PMOS W=918172u L=0.35u
DDS   1  3    DDS
CGS   5  3    5.796E-10
RG    2  5    36
RD    1  4    RTEMP 5.963072E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  0    DD1
DDG2  8  7    DD1
EGD1  9  0 8 0 1
EGD2 10  0 7 8 1
COX  10 11    3.11368E-10
DCRR 9  11    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  PMOS       PMOS  (LEVEL  = 3               TOX    = 180E-10
+ XJ     = 0.915E-6       LD     = 0                    
+ TPG    = 1              RS     = 17.0E-3         RD     = 14.44E-3
+ NSUB   = 3.50E17        IS     = 0
+ UO     = 600          
+ NFS    = 0.35E12        THETA  = 0.00
+ ETA    = 0              KAPPA  = 1.0
+ KP     = 15.5E-6        PHI    = 0.88
+ CGSO   = 0              CGDO   = 0               CGBO   = 0        )
*************************************************************************
.MODEL DDS D (CJO=4.64805E-10 VJ=0.43 M=0.545562453
+RS=0.026319575 IS=1.294E-11 TT=110E-9 N=1.143859916 BV=30)
*************************************************************************
.MODEL DDG D (CJO=2.20394E-10 VJ=0.834806939 M=0.459921504 IS=1E-32 N=50 FC=1E-8)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.02134034 TC2=1.87211E-5)
*************************************************************************
.ENDS 2SJ624
