.SUBCKT 2SJ625 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation        *
*         All Rights Reserved        *
*Commercial Use or Resale Restricted *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 PMOS W=357782u L=0.6u
DDS   1  3    DDS
CGS   5  3    4.532E-11
RG    2  5    310
RD    1  4    RTEMP 9.787108E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  0    DD1
DDG2  8  7    DD1
EGD1  9  0 8 0 1
EGD2 10  0 7 8 1
COX  10 11    3.41148E-10
DCRR 9  11    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  PMOS       PMOS  (LEVEL  = 3               TOX    = 180E-10
+ XJ     = 1.17E-6        LD     = 0                    
+ TPG    = 1              RS     = 17.0E-3         RD     = 33.3E-3
+ NSUB   = 2.30E17        IS     = 0
+ UO     = 600          
+ NFS    = 0.38E12        THETA  = 0.00
+ ETA    = 0              KAPPA  = 1.0
+ KP     = 16.0E-6        PHI    = 0.85
+ CGSO   = 0              CGDO   = 0               CGBO   = 0        )
*************************************************************************
.MODEL DDS D (CJO=1.06232E-10 VJ=1.954156011 M=0.406480724
+RS=0.027018847 IS=2.487E-11 TT=110E-9 N=1.217603334 BV=28.5)
*************************************************************************
.MODEL DDG D (CJO=7.44219E-11 VJ=4 M=0.542026061 IS=1E-32 N=50 FC=1E-8)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.021690243 TC2=-6.50624E-6)
*************************************************************************
.ENDS 2SJ625
