.SUBCKT 2SJ626 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation        *
*         All Rights Reserved        *
*Commercial Use or Resale Restricted *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 PMOS W=357782u L=0.6u
DDS   1  3    DDS
CGS   5  3    8.556E-11
RG    2  5    140
RD    1  4    RTEMP 13.822052E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  0    DD1
DDG2  8  7    DD1
EGD1  9  0 8 0 1
EGD2 10  0 7 8 1
COX  10 11    8.93223E-11
DCRR 9  11    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  PMOS       PMOS  (LEVEL  = 3               TOX    = 440E-10
+ XJ     = 1.17E-6        LD     = 0                    
+ TPG    = 1              RS     = 17.0E-3         RD     = 253.0E-3
+ NSUB   = 2.10E17        IS     = 0
+ UO     = 600          
+ NFS    = 0.36E12        THETA  = 0.00
+ ETA    = 0              KAPPA  = 1.0
+ KP     = 7.3E-6        PHI    = 0.83
+ CGSO   = 0              CGDO   = 0               CGBO   = 0        )
*************************************************************************
.MODEL DDS D (CJO=1.10687E-10 VJ=0.43 M=0.429729441
+RS=0.035347598 IS=1.000E-10 TT=110E-9 N=1.329348335 BV=68.8)
*************************************************************************
.MODEL DDG D (CJO=3.12016E-11 VJ=3.251089329 M=0.483113983 IS=1E-32 N=50 FC=1E-8)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.135343904 TC2=0.000138862)
*************************************************************************
.ENDS 2SJ626
