.SUBCKT M2SK1590 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation                    *
*         All Rights Reserved                           *
*Commercial Use or Resale Restricted          *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=3612u L=2.04u
DDS   3  1    DDS
CGS   5  3    1.831E-11
RG    2  5    2100
RD    1  4    RTEMP 544.65624E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    3.84292E-11
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3               TOX    = 500E-10
+ XJ     = 1.2E-6         LD     = 0
+ TPG    = 1              RS     = 806E-3          RD     = 555.2E-3
+ NSUB   = 0.58E17        IS     = 0
+ UO     = 600            KAPPA  = 0.5
+ NFS    = 1.20E11
+ ETA    = 0           
+ KP     = 21.0E-5        PHI    = 0.81
+ CGSO   = 0              CGDO   = 0               CGBO   = 0)
*************************************************************************
.MODEL DDS D (CJO=3.54425E-11 VJ=0.948768369 M=0.433599608
+RS=0.223554368 IS=1.906E-11 TT=50.0E-9 N=1.281115357 BV=73)
*************************************************************************
.MODEL DDG D (CJO=1.22584E-11 VJ=0.43 M=0.481938671 IS=1E-32 N=50 FC=1E-8)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.019947665 TC2=5.9401E-5)
*************************************************************************
.ENDS M2SK1590
