.SUBCKT 2SK1850 1 2 3						
**************************************						
*      Model Generated by Renesas Electronics Corporation        *						
*         All Rights Reserved        *						
*Commercial Use or Resale Restricted *						
**************************************						
* Model generated on Jul 11, 2006						
* MODEL FORMAT: SPICE2G.6						
* POWER MOSFET Model (Version 3.0)						
* External Node Designations						
* Node 1 -> Drain						
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=513260.84u L=2.5u
DDS   3  1    DDS
CGS   5  3    4.628E-10
RG    2  5    38
RD    1  4    RTEMP 3.812926E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    1.14E-09
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3              TOX    = 500E-10
+ XJ     = 1.5E-6       LD     = 0              WD     = 0
+ TPG    = 1              RS     = 2.5E-2         RD     = 0.20E-1
+ NSUB   = 0.75E17        IS     = 0
+ UO     = 600            KAPPA  = 15
+ NFS    = 1.0E10        THETA  = 0.05
+ KP     = 80E-6       PHI    = 0.80
+ CGSO   = 0              CGDO   = 0              CGBO   = 0         )
*************************************************************************
.MODEL DDS D (CJO=1.35807E-09 VJ=0.43 M=0.430812478
+RS=0.014053741 IS=1.000E-10 TT=3.8E-8 N=1.164917215 BV=60)
*************************************************************************
.MODEL DDG D (CJO=1.16697E-09 VJ=0.439270827 M=0.723367346 IS=1.00E-32 N=50 FC=1E-8)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.025801665 TC2=0.000178476)
*************************************************************************
.ENDS 2SK1850


