.SUBCKT 2SK2109 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation                    *
*         All Rights Reserved                        *
*Commercial Use or Resale Restricted          *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=84640u L=1.19u
DDS   3  1    DDS
CGS   5  3    2.476E-11
RG    2  5    54.8
RD    1  4    RTEMP 81.1E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    1.91516E-10
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3              TOX    = 500E-10
+ XJ     = 0.3E-6         LD     = 0                  
+ TPG    = 1              RS     = 55.3E-3        RD     = 142.5E-3
+ NSUB   = 0.65E17        IS     = 0
+ UO     = 600            VMAX   = 0              KAPPA  = 0.0    
+ NFS    = 0.05E12        THETA  = 0.15
+ KP     = 28.0E-6        PHI    = 0.73
+ CGSO   = 0              CGDO   = 0              CGBO   = 0      )
*************************************************************************
.MODEL DDS D (CJO=9.52091E-11 VJ=3.4592384 M=0.6604254
+RS=0.05785 IS=9.999E-11 TT=20.5E-9 N=1.3328 BV=86)
*************************************************************************
.MODEL DDG D (CJO=1.4879352E-10 VJ=0.43 M=0.6762868
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.023769 TC2=0.000107647)
*************************************************************************
.ENDS 2SK2109
