.SUBCKT 2SK2111 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation        *
*         All Rights Reserved        *
*Commercial Use or Resale Restricted *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=0.2133 L=2u
DDS   3  1    DDS
CGS   5  3    1.603E-11
RG    2  5    45.5
RD    1  4    RTEMP 10.5E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    8.08008E-10
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3               TOX    = 500E-10
+ XJ     = 1.25E-6         LD     = 0
+ TPG    = 1               RS     = 13E-3            RD     = 15.9E-3
+ NSUB   = 0.61E17          IS     = 0
+ UO     = 600             KAPPA  =0.0 
+ NFS    = 0.16E12      THETA  = 0.65
+ ETA    = 0       
+ KP     = 37E-6          PHI    = 0.74
+ CGSO   = 0              CGDO   = 0                CGBO   = 0)
*************************************************************************
.MODEL DDS D (CJO=1.79599E-10 VJ=0.950106806 M=0.536644787
+RS=0.083627614 IS=7.62E-13 TT=120.1E-9 N=1.029185647 BV=70)
***********************************************************************
.MODEL DDG D (CJO=1.45316E-10 VJ=0.43 M=0.514048495 IS=1E-32 N=50 FC=1E-8)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.014967342 TC2=3.30076E-5)
*************************************************************************
.ENDS 2SK2111
