.SUBCKT 2SK2158 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation                    *
*         All Rights Reserved                        *
*Commercial Use or Resale Restricted          *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=2160u L=2.04u
DDS   3  1    DDS
CGS   5  3    1.95E-12
RG    2  5    3000
RD    1  4    RTEMP 2.808
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    4.59784E-11
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3              TOX    = 350E-10
+ XJ     = 1.2E-6        LD     = 0                  
+ TPG    = 1              RS     = 206E-3         RD     = 3081E-3
+ NSUB   = 0.51E17        IS     = 0
+ UO     = 600            VMAX   = 0              KAPPA  = 0.8    
+ NFS    = 0.05E12        THETA  = 0
+ KP     = 50.5E-6        PHI    = 0.7
+ CGSO   = 0              CGDO   = 0              CGBO   = 0      )
*************************************************************************
.MODEL DDS D (CJO=1.169045E-11 VJ=0.622779 M=0.3618457
+RS=0.82151450 IS=9.9995E-11 TT=30.0E-9 N=1.51420 BV=62)
*************************************************************************
.MODEL DDG D (CJO=8.1548618E-13 VJ=4 M=0.5496546
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.017170521 TC2=0.000140222)
*************************************************************************
.ENDS 2SK2158
