.SUBCKT 2SK2858 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation                    *
*         All Rights Reserved                        *
*Commercial Use or Resale Restricted          *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain 1
* Node 2 -> Gate 1
* Node 3 -> Source 1
***************************************
M11  4 5 3 3 NMOS W=6912u L=1.36u
DDS1   3  1    DDS
CGS1   5  3    1.524E-12
RG1    2  5    5000
RD1    1  4    RTEMP 263.1E-3
FGD1   1  5 VFGD1 1
EVGD1  7  0 1 5 1
DDG11  8  7    DD1
DDG21  8  0    DD1
EGD11  9  0 7 8 1
EGD21 10  0 8 0 1
COX1  10 11    5.9E-12
DCRR1 11  9    DDG
VFGD1 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3              TOX    = 500E-10
+ XJ     = 0.3E-6         LD     = 0                  
+ TPG    = 1              RS     = 77.7E-3        RD     = 312.5E-3
+ NSUB   = 0.60E17        IS     = 0
+ UO     = 600            VMAX   = 0              KAPPA  = 0.0    
+ NFS    = 0.15E12        THETA  = 0.35
+ KP     = 39.0E-6        PHI    = 0.87
+ CGSO   = 0              CGDO   = 0              CGBO   = 0      )
*************************************************************************
.MODEL DDS D (CJO=1.769905E-11 VJ=0.79247 M=0.3601643
+RS=0.355629 IS=9.9995E-11 TT=20.5E-9 N=1.527843 BV=56)
*************************************************************************
.MODEL DDG D (CJO=5.0118392E-12 VJ=0.43 M=0.4355624
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.0050247 TC2=-0.00007174)
*************************************************************************
.ENDS 2SK2858
