.SUBCKT 2SK3479 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation                    *
*         All Rights Reserved                        *
*Commercial Use or Resale Restricted          *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=16022988u L=0.3u
DDS   3  1    DDS
CGS   5  3    7.326E-9
RG    2  5    2.9
RD    1  4    RTEMP 2.792188E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    9.74806E-9
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3              TOX    = 500E-10
+ XJ     = 1.25E-6        LD     = 0                  
+ TPG    = 1              RS     = 0.6E-3         RD     = 4.0E-3
+ NSUB   = 3.80E17         IS     = 0
+ UO     = 600            VMAX   = 0              KAPPA  = 1    
+ NFS    = 0.5E12         THETA  = 0.7
+ KP     = 9.5E-6          PHI    = 0.76
+ CGSO   = 0              CGDO   = 0              CGBO   = 0      )
*************************************************************************
.MODEL DDS D (CJO=2.4724376E-09 VJ=0.6946223 M=0.583044989
+RS=0.0020784282 IS=9.9995E-11 TT=36.0E-9 N=1.05717299 BV=118)
*************************************************************************
.MODEL DDG D (CJO=2.55071891E-09 VJ=0.43 M=0.53717919
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.02172863 TC2=5.9896545E-05)
*************************************************************************
.ENDS 2SK3479
