.SUBCKT 2SK3481 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation                    *
*         All Rights Reserved                        *
*Commercial Use or Resale Restricted          *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=3323088u L=1.0u
DDS   3  1    DDS
CGS   5  3    0.220E-10
RG    2  5    2.41
RD    1  4    RTEMP 18.934401E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    2.30322E-9
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3              TOX    = 500E-10
+ XJ     = 1.25E-6        LD     = 0                  
+ TPG    = 1              RS     = 1.2E-3         RD     = 13.0E-3
+ NSUB   = 1.73E17        IS     = 0
+ UO     = 600            VMAX   = 0              KAPPA  = 1    
+ NFS    = 0.4E12         THETA  = 0.3
+ KP     = 26.0E-6        PHI    = 0.75
+ CGSO   = 0              CGDO   = 0              CGBO   = 0      )
*************************************************************************
.MODEL DDS D (CJO=4.7005899E-10 VJ=0.7596565 M=0.53905844344
+RS=0.00482412 IS=9.9995093E-11 TT=32.7E-9 N=1.15929524 BV=118)
*************************************************************************
.MODEL DDG D (CJO=4.2653157E-10 VJ=1.725694626 M=0.6638460188
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.01673139 TC2=5.1197162E-05)
*************************************************************************
.ENDS 2SK3481
