.SUBCKT 2SK3483 1 2 3 
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* Model Generated by Renesas Electronics Corporation * 
* All Rights Reserved * 
*Commercial Use or Resale Restricted * 
************************************** 


* Model generated on December 1, 2000 
* MODEL FORMAT: SPICE2G.6 
* POWER MOSFET Model (Version 3.1) 
* External Node Designations 
* Node 1 -> Drain 
* Node 2 -> Gate 
* Node 3 -> Source 
*************************************** 
M1 4 5 3 3 NMOS W=2.953856 L=0.8u 
DDS 3 1 DDS 
CGS 5 3 9.479E-10 
RG 2 5 2 
RD 1 4 RTEMP 15.1586104E-03 
FGD 1 5 VFGD 1 
EVGD 7 0 1 5 1 
DDG1 8 7 DD1 
DDG2 8 0 DD1 
EGD1 9 0 7 8 1 
EGD2 10 0 8 0 1 
COX 10 11 1.91213E-9 
DCRR 11 9 DDG 
VFGD 11 0 0 
************************************************************************** 
.MODEL NMOS NMOS (LEVEL = 3 TOX = 500E-10 
+ XJ = 2.5E-6 LD = 0 
+ TPG = 1 RS = 1.3E-3 RD = 10.94E-3 
+ NSUB = 2.34E17 IS = 0 
+ UO = 600 KAPPA = 9.0 
+ NFS = 0.37E12 THETA = 2.35 
+ ETA = 0 
+ KP = 52.0E-6 PHI = 0.800 
+ CGSO = 0 CGDO = 0 CGBO = 0) 
************************************************************************* 
.MODEL DDS D (CJO=3.92299E-10 VJ=0.950106806 M=0.536644787 
+RS=0.00654057 IS=1.00E-10 TT=31.13E-9 N=1.15963118 BV=100) 
*********************************************************************** 
.MODEL DDG D (CJO=6.40316E-10 VJ=0.43 M=0.514048495 IS=1E-32 N=50 FC=1E-8) 
************************************************************************* 
.MODEL DD1 D (CJO=0 N=1) 
************************************************************************* 
.MODEL RTEMP RES (TC1=0.015921949 TC2=5.15025E-05) 
************************************************************************* 
.ENDS 2SK3483 

