.SUBCKT 2SK3484 1 2 3 
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* Model Generated by Renesas Electronics Corporation * 
* All Rights Reserved * 
*Commercial Use or Resale Restricted * 
************************************** 


* Model generated on December 1, 2000 
* MODEL FORMAT: SPICE2G.6 
* POWER MOSFET Model (Version 3.1) 
* External Node Designations 
* Node 1 -> Drain 
* Node 2 -> Gate 
* Node 3 -> Source 
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M1 4 5 3 3 NMOS W=1371186u L=1.0u 
DDS 3 1 DDS 
CGS 5 3 0.50E-10 
RG 2 5 3.76 
RD 1 4 RTEMP 19.4464693E-3 
FGD 1 5 VFGD 1 
EVGD 7 0 1 5 1 
DDG1 8 7 DD1 
DDG2 8 0 DD1 
EGD1 9 0 7 8 1 
EGD2 10 0 8 0 1 
COX 10 11 9.67234E-10 
DCRR 11 9 DDG 
VFGD 11 0 0 
************************************************************************** 
.MODEL NMOS NMOS (LEVEL = 3 TOX = 500E-10 
+ XJ = 1.00E-6 LD = 0 
+ TPG = 1 RS = 2.1E-3 RD = 62.5E-3 
+ NSUB = 1.55E17 IS = 0 
+ UO = 600 VMAX = 0 
+ NFS = 1.75E11 THETA = 0.05 
+ KP = 18.0E-6 PHI = 0.72 
+ CGSO = 0 CGDO = 0 CGBO = 0 ) 
************************************************************************* 
.MODEL DDS D (CJO=2.26802E-10 VJ=0.542580038 M=0.486393735 
+RS=0.008395116 IS=1.00E-10 TT=36.0E-9 N=1.212666889 BV=120) 
************************************************************************* 
.MODEL DDG D (CJO=1.41245E-10 VJ=3.149507516 M=0.690539402 IS=1E-32 N=50 FC=1E-8) 
************************************************************************* 
.MODEL DD1 D (CJO=0 N=1) 
************************************************************************* 
.MODEL RTEMP RES (TC1=0.037645815 TC2=0.000111596) 
************************************************************************* 
.ENDS 2SK3484 

