.SUBCKT 2SK3663 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation                    *
*         All Rights Reserved                        *
*Commercial Use or Resale Restricted          *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=32060u L=0.55u
DDS   3  1    DDS
CGS   5  3    6.935E-12
RG    2  5    1200
RD    1  4    RTEMP 14.280428E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    3.02587E-11
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3              TOX    = 300E-10
+ XJ     = 1.25E-6        LD     = 0                  
+ TPG    = 1              RS     = 80E-3          RD     = 40.0E-3
+ NSUB   = 0.98E17        IS     = 0
+ UO     = 600            VMAX   = 0              KAPPA  = 0.2    
+ NFS    = 0.37E12        THETA  = 0.3
+ KP     = 38.5E-6        PHI    = 0.75
+ CGSO   = 0              CGDO   = 0              CGBO   = 0      )
*************************************************************************
.MODEL DDS D (CJO=1.13422346E-11 VJ=0.5911051 M=0.3527112
+RS=0.1313462 IS=2.203097E-11 TT=13.3E-9 N=1.3132968 BV=28)
*************************************************************************
.MODEL DDG D (CJO=1.9584938E-11 VJ=0.43 M=0.33831258
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.0108964 TC2=6.3934663E-05)
*************************************************************************
.ENDS 2SK3663
