.SUBCKT 2SK3918 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation                    *
*         All Rights Reserved                        *
*Commercial Use or Resale Restricted          *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=3820304u L=0.34u
DDS   3  1    DDS
CGS   5  3    1.04E-10
RG    2  5    2.4
RD    1  4    RTEMP 0.68594E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    9.75853E-10
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3              TOX    = 500E-10
+ XJ     = 1.25E-6        LD     = 0                  
+ TPG    = 1              RS     = 0.35E-3         RD     = 0.67E-3
+ NSUB   = 0.32E18        IS     = 0
+ UO     = 600            VMAX   = 0              KAPPA  = 0.1    
+ NFS    = 0.66E12        THETA  = 0.15
+ KP     = 6.25E-6        PHI    = 1.02
+ CGSO   = 0              CGDO   = 0              CGBO   = 0      )
*************************************************************************
.MODEL DDS D (CJO=3.95558295E-10 VJ=0.8779662 M=0.576166153
+RS=0.00386593987 IS=1.539213E-12 TT=7.2E-9 N=1.0075575 BV=29.6)
*************************************************************************
.MODEL DDG D (CJO=7.338070996E-10 VJ=0.85943732 M=0.49237653
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.00892392 TC2=3.186086535E-05)
*************************************************************************
.ENDS 2SK3918
