.SUBCKT 2SK3919 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation                    *
*         All Rights Reserved                        *
*Commercial Use or Resale Restricted          *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=5816268u L=0.34u
DDS   3  1    DDS
CGS   5  3    3.86E-10
RG    2  5    2.36
RD    1  4    RTEMP 0.146337E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    1.3966E-9
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3              TOX    = 500E-10
+ XJ     = 1.25E-6        LD     = 0                  
+ TPG    = 1              RS     = 0.17E-3         RD     = 0.60E-3
+ NSUB   = 0.36E18        IS     = 0
+ UO     = 600            VMAX   = 0              KAPPA  = 0.3    
+ NFS    = 0.35E12        THETA  = 0.5
+ KP     = 10.0E-6        PHI    = 0.94
+ CGSO   = 0              CGDO   = 0              CGBO   = 0      )
*************************************************************************
.MODEL DDS D (CJO=4.44577082E-10 VJ=0.79839289 M=0.4594459
+RS=0.002912062767 IS=3.98984133E-12 TT=5.0E-9 N=1.0242892 BV=30)
*************************************************************************
.MODEL DDG D (CJO=1.2006067E-09 VJ=0.649925638 M=0.4756177
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.00658076 TC2=4.9450783E-05)
*************************************************************************
.ENDS 2SK3919
