.SUBCKT NP110N04PUG 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation                    *
*         All Rights Reserved                        *
*Commercial Use or Resale Restricted          *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=40338783.5u L=0.3u
DDS   3  1    DDS
CGS   5  3    0.95E-08
RG    2  5    1.16
RD    1  4    RTEMP 0.0947E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    7.2224E-9
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3              TOX    = 500E-10
+ XJ     = 1.25E-6        LD     = 0                  
+ TPG    = 1              RS     = 0.3E-3         RD     = 0.88E-3
+ NSUB   = 0.50E18        IS     = 0
+ UO     = 600            VMAX   = 0              KAPPA  = 0.15    
+ NFS    = 0.30E12        THETA  = 0.2
+ KP     = 13.5E-6        PHI    = 0.97
+ CGSO   = 0              CGDO   = 0              CGBO   = 0      )
*************************************************************************
.MODEL DDS D (CJO=1.889337E-09 VJ=4 M=0.6211215
+RS=0.000821853669 IS=3.8255236E-11 TT=18.3E-9 N=1.050851 BV=46)
*************************************************************************
.MODEL DDG D (CJO=6.73810746E-09 VJ=1.8359379 M=0.900995
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.05803316 TC2=0.0001034)
*************************************************************************
.ENDS NP110N04PUG
