.SUBCKT NP22N055IHE 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation                      *
*         All Rights Reserved                           *
*Commercial Use or Resale Restricted          *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=1.371186 L=0.8u
DDS   3  1    DDS
CGS   5  3    5.223E-12
RG    2  5    3
RD    1  4    RTEMP 3.112276E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    3.63627E-10
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3           TOX    = 670E-10
+ XJ     = 1.25E-6        LD     = 0
+ TPG    = 1                RS     = 2.1E-3         RD     = 15.5E-3
+ NSUB   = 2.05E17      IS     = 0
+ UO     = 600             VMAX   = 2.5E4         KAPPA  = 7.5
+ NFS    = 0.52E12       THETA  = 0.25
+ ETA    = 0                 KP     = 28.0E-6          
+ PHI    = 0.82
+ CGSO   = 0              CGDO   = 0               CGBO   = 0)
*************************************************************************
.MODEL DDS D (CJO=4.18234E-10 VJ=0.803659171 M=0.589263417
+RS=0.006720463 IS=1.777E-11 TT=14.5E-9 N=1.125395116 BV=65)
*************************************************************************
.MODEL DDG D (CJO=3.08638E-10 VJ=0.437643944 M=0.446885678 IS=1E-32 N=50 FC=1E-8)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.04411909 TC2=1.06247E-4)
*************************************************************************
.ENDS NP22N055IHE
