.SUBCKT NP50P04SDG 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation        *
*         All Rights Reserved        *
*Commercial Use or Resale Restricted *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 PMOS W=15657419u L=0.46u
DDS   1  3    DDS
CGS   5  3    0.3E-09
RG    2  5    19
RD    1  4    RTEMP 0.00322
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  0    DD1
DDG2  8  7    DD1
EGD1  9  0 8 0 1
EGD2 10  0 7 8 1
COX  10 11    3.08691E-09
DCRR 9  11    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  PMOS       PMOS  (LEVEL  = 3               TOX    = 440E-10
+ XJ     = 0.68E-6       LD     = 0                    
+ TPG    = 1              RS     = 0.0011       RD     = 0.50E-3
+ NSUB   = 1.62E17        IS     = 0               UO     = 600
+ NFS    = 0.7E12        THETA  = 0.46
+ ETA    = 0              KAPPA  = 0.1
+ KP     = 6.0E-6         PHI    = 0.95        
+ CGSO   = 0              CGDO   = 0               CGBO   = 0        )
*************************************************************************
.MODEL DDS D (CJO=1.18139833471756E-09 VJ=0.730939532858116 M=0.477623332649249
+RS=0.00260051856875559 IS=3.03864584069454E-11 TT=16.2E-9 N=1.11934509869255 BV=53)
*************************************************************************
.MODEL DDG D (CJO=8.0499056794865E-10 VJ=1.81199101042095 M=0.375347406826502
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=6.2354E-03 TC2=0.8916E-05)
*************************************************************************
.ENDS NP50P04SDG

