.SUBCKT NP50P06KDG 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation        *
*         All Rights Reserved        *
*Commercial Use or Resale Restricted *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 PMOS W=15657419u L=0.46u
DDS   1  3    DDS
CGS   5  3    0.25E-09
RG    2  5    19
RD    1  4    RTEMP 0.006
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  0    DD1
DDG2  8  7    DD1
EGD1  9  0 8 0 1
EGD2 10  0 7 8 1
COX  10 11    3.17744E-09
DCRR 9  11    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  PMOS       PMOS  (LEVEL  = 3               TOX    = 440E-10
+ XJ     = 0.68E-6       LD     = 0                    
+ TPG    = 1              RS     = 0.00060         RD     = 1.90E-3
+ NSUB   = 1.72E17        IS     = 0               UO     = 600
+ NFS    = 1.1E12        THETA  = 0.7
+ ETA    = 0              KAPPA  = 1.0
+ KP     = 5.00E-6         PHI    = 1.00
+ CGSO   = 0              CGDO   = 0               CGBO   = 0        )
*************************************************************************
.MODEL DDS D (CJO=1.06011E-09 VJ=0.755668466 M=0.479087203
+RS=0.002691503 IS=4.171E-11 TT=18.1E-9 N=1.137068491 BV=75)
*************************************************************************
.MODEL DDG D (CJO=6.09733E-10 VJ=1.675558237 M=0.384203622
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=7.974675E-03 TC2=1.615196E-05)
*************************************************************************
.ENDS NP50P06KDG

