.SUBCKT NP52N06SLG 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation        *
*         All Rights Reserved        *
*Commercial Use or Resale Restricted *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=5872829.76u L=0.45u
DDS   3  1    DDS
CGS   5  3    0.25E-9
RG    2  5    2.7
RD    1  4    RTEMP 1.1E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    1.6E-9
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3              TOX    = 500E-10
+ XJ     = 1.25E-6        LD     = 0                  
+ TPG    = 1              RS     = 1.05E-3        RD     = 4.4E-3
+ NSUB   = 1.95E17        IS     = 0
+ UO     = 600            VMAX   = 0              KAPPA  = 0.50    
+ NFS    = 0.50E12        THETA  = 0.6
+ KP     = 9.1E-6        PHI    = 0.99
+ CGSO   = 0              CGDO   = 0              CGBO   = 0      )
*************************************************************************
.MODEL DDS D (CJO=4.37916E-10 VJ=0.566981557 M=0.525880869
+RS=0.002500519 IS=1.023E-11 TT=11E-9 N=1.079898526 BV=80.4)
*************************************************************************
.MODEL DDG D (CJO=8.10851E-10 VJ=0.43 M=0.553508674
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.04820445 TC2=0.0001491023)
*************************************************************************
.ENDS NP52N06SLG
