.SUBCKT  NP80N03CLE 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation                      *
*         All Rights Reserved                           *
*Commercial Use or Resale Restricted          *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=5226588u L=0.6u
DDS   3  1    DDS
CGS   5  3    4.604E-10
RG    2  5    2
RD    1  4    RTEMP 1.643212E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    1.38893E-9
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3               TOX    = 500E-10
+ XJ     = 1.25E-6        LD     = 0
+ TPG    = 1                RS     = 0.60E-3          RD     = 2.20E-3
+ NSUB   = 2.45E17         IS     = 0
+ UO     = 600          
+ NFS    = 0.60E12       THETA  = 0.2      
+ PHI    = 0.80
+ KP     = 25E-6                  
+ CGSO   = 0               CGDO   = 0                CGBO   = 0)
*************************************************************************
.MODEL DDS D (CJO=1.68416E-9 VJ=0.43 M=0.378808582
+RS=0.003635682 IS=1.00E-10 TT=9.0E-9 N=1.140575782 BV=40)
*************************************************************************
.MODEL DDG D (CJO=1.22623E-9 VJ=0.516745694 M=0.411617696 IS=1E-32 N=50 FC=1E-8)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.009248368 TC2=7.05494E-06)
*************************************************************************
.ENDS NP80N03CLE
