.SUBCKT NP82N055DHE 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation                      *
*         All Rights Reserved                           *
*Commercial Use or Resale Restricted          *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=6.987776 L=0.8u
DDS   3  1    DDS
CGS   5  3    6.256E-10
RG    2  5    2
RD    1  4    RTEMP 2.058312E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    2.04621E-9
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3            TOX    = 670E-10
+ XJ     = 2.5E-6         LD     = 0
+ TPG    = 1               RS     = 0.6E-3        RD    = 1.4E-3
+ NSUB   = 3.4E17       IS     = 0
+ UO     = 600             VMAX   = 3.3E4       KAPPA  = 2
+ NFS    = 0.7E12        THETA  = 1.9      
+ ETA    = 0               DELTA  = 0
+ KP     = 80E-6       
+ CGSO   = 0              CGDO   = 0             CGBO   = 0)
*************************************************************************
.MODEL DDS D (CJO=2.32391E-9 VJ=0.43 M=0.55787468
+RS=0.002840345 IS=1.00E-10 TT=13E-9 N=1.138472279 BV=65)
*************************************************************************
.MODEL DDG D (CJO=1.71117E-9 VJ=0.43 M=0.477603843 IS=1E-32 N=50 FC=1E-8)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.0111942 TC2=2.9119E-5)
*************************************************************************
.ENDS NP82N055DHE
