.SUBCKT NP82N055PUG 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation                    *
*         All Rights Reserved                        *
*Commercial Use or Resale Restricted          *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=16466330u L=0.3u
DDS   3  1    DDS
CGS   5  3    2.81E-09
RG    2  5    2.73
RD    1  4    RTEMP 0.586033E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    3.91788E-9
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3              TOX    = 500E-10
+ XJ     = 1.25E-6        LD     = 0                  
+ TPG    = 1              RS     = 0.40E-3        RD     = 1.18E-3
+ NSUB   = 0.63E18        IS     = 0
+ UO     = 600            VMAX   = 0              KAPPA  = 0.1    
+ NFS    = 0.50E12        THETA  = 0.6
+ KP     = 7.5E-6         PHI    = 0.95
+ CGSO   = 0              CGDO   = 0              CGBO   = 0      )
*************************************************************************
.MODEL DDS D (CJO=1.17277221E-09 VJ=1.290729 M=0.6249394215
+RS=0.0015206715 IS=7.023499E-12 TT=12.2E-9 N=1.024198 BV=65.8)
*************************************************************************
.MODEL DDG D (CJO=2.124183286E-09 VJ=1.56963166 M=0.929426614
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.027494562 TC2=6.537848423E-05)
*************************************************************************
.ENDS NP82N055PUG
