.SUBCKT NP83P04PDG 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation        *
*         All Rights Reserved        *
*Commercial Use or Resale Restricted *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 PMOS W=30452668.48u L=0.46u
DDS   1  3    DDS
CGS   5  3    0.473E-09
RG    2  5    7.0
RD    1  4    RTEMP 0.00185
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  0    DD1
DDG2  8  7    DD1
EGD1  9  0 8 0 1
EGD2 10  0 7 8 1
COX  10 11    6.07963E-09
DCRR 9  11    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  PMOS       PMOS  (LEVEL  = 3               TOX    = 440E-10
+ XJ     = 0.69E-6       LD     = 0                    
+ TPG    = 1              RS     = 0.0004        RD     = 0.5E-5
+ NSUB   = 1.72E17        IS     = 0               UO     = 600
+ NFS    = 1.0E12        THETA  = 0.45
+ ETA    = 0              KAPPA  = 1.0
+ KP     = 5.00E-6         PHI    = 1.0500
+ CGSO   = 0              CGDO   = 0               CGBO   = 0        )
*************************************************************************
.MODEL DDS D (CJO=2.05230393811736E-09 VJ=2.08637189174298 M=0.612349305901633
+RS=0.00143285502982623 IS=8.05474847600198E-11 TT=17.6E-9 N=1.1254610245906 BV=53)
*************************************************************************
.MODEL DDG D (CJO=1.2641692421482E-09 VJ=5 M=0.415640951974002
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=6.441167E-03 TC2=6.706646E-06)
*************************************************************************
.ENDS NP83P04PDG

