.SUBCKT NP88N055CHE 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation                      *
*         All Rights Reserved                           *
*Commercial Use or Resale Restricted          *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=14.242 L=0.7u
DDS   3  1    DDS
CGS   5  3    2.713E-9
RG    2  5    2.9
RD    1  4    RTEMP 0.1009E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    3.51424E-9
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3            TOX    = 670E-10
+ XJ     = 0.4E-6         LD     = 0
+ TPG    = 1               RS     = 0.3E-3        RD     = 3.25E-3
+ NSUB   = 22E16       IS     = 0
+ UO     = 600            VMAX   = 7E3          KAPPA  = 1
+ NFS    = 5E11          NSS    = 1E4           THETA  = 1        
+ ETA    = 0               DELTA  = 0
+ KP     = 10E-5                          
+ CGSO   = 0             CGDO   = 0             CGBO   = 0)             
*************************************************************************
.MODEL DDS D (CJO=3.97156E-9 VJ=1.163134093 M=0.600736352
+RS=0.001876932 IS=1.000E-10 TT=19.5E-9 N=1.107413655 BV=65)
*************************************************************************
.MODEL DDG D (CJO=2.94614E-9 VJ=0.43 M=0.470902034 IS=1E-32 N=50 FC=1E-8)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.19088 TC2=2.64e-4)
*************************************************************************
.ENDS NP88N055CHE
