.SUBCKT uPA1856 1 2 3
***************************************************
*Model Generated by Renesas Electronics Corporation Electronics Corporation *
* All Rights Reserved *
* Commercial Use or Resale Restricted *
***************************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.0)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
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M1 4 5 3 3 PMOS W=1.0373164 L=0.6u
DDS 1 3 DDS
CGS 5 3 2.801E-11
RG 2 5 700
RD 1 4 RTEMP 3.126024E-3
FGD 1 5 VFGD 1
EVGD 7 0 1 5 1
DDG1 8 0 DD1
DDG2 8 7 DD1
EGD1 9 0 8 0 1
EGD2 10 0 7 8 1
COX 10 11 6.23455E-10
DCRR 9 11 DDG
VFGD 11 0 0
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.MODEL PMOS PMOS (LEVEL = 3 TOX = 270E-10
+ XJ = 1.17E-6 LD = 0 WD = 0
+ TPG = 1 RS = 13.1E-3 RD = 8.8E-3
+ RG = 0 NSUB = 1.79E17 IS = 0
+ UO = 600
+ NFS = 0.68E12 THETA = 0.10
+ ETA = 0
+ KP = 17.3E-6 PHI = 0.88
+ CGSO = 0 CGDO = 0 CGBO = 0
+ XQC = 1.0 AF = 1 CBD = 0
+ CBS = 0 CJ = 0 CJSW = 0
+ FC = 0.5 JS = 0 KF = 0
+ MJ = 0.5 MJSW = 0.33 PB = 0.8
+ RSH = 0)
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.MODEL DDS D (CJO=1.88003E-10 VJ=2.669429112 M=0.590123187
+RS=0.013764756 IS=1.538E-11 TT=13.8E-9 N=1.130273007 BV=30)
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.MODEL DDG D (CJO=3.57708E-10 VJ=0.43 M=0.321864048 IS=1E-32 N=50 FC=1E-8)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
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.MODEL RTEMP RES (TC1=0.02422339 TC2=-5.2812E-5)
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.ENDS uPA1856
