.SUBCKT uPA1901 1 2 3
***************************************************
*Model Generated by Renesas Electronics Corporation Electronics Corporation *
* All Rights Reserved *
* Commercial Use or Resale Restricted *
***************************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
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M1 4 5 3 3 NMOS W=865719u L=0.55u
DDS 3 1 DDS
CGS 5 3 0.922E-11
RG 2 5 110
RD 1 4 RTEMP 4.920964E-3
FGD 1 5 VFGD 1
EVGD 7 0 1 5 1
DDG1 8 7 DD1
DDG2 8 0 DD1
EGD1 9 0 7 8 1
EGD2 10 0 8 0 1
COX 10 11 6.99735E-10
DCRR 11 9 DDG
VFGD 11 0 0
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.MODEL NMOS NMOS (LEVEL = 3 TOX = 300E-10
+ XJ = 1.00E-6 LD = 0
+ TPG = 1 RS = 13.1E-3 RD = 6.4E-3
+ NSUB = 1.65E17 IS = 0
+ UO = 600 VMAX = 0
+ NFS = 1.00E11 THETA = 0.05
+ KP = 34E-6 PHI = 0.74
+ CGSO = 0 CGDO = 0 CGBO = 0 )
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.MODEL DDS D (CJO=8.93571E-11 VJ=4 M=0.545501998
+RS=0.01589114 IS=2.048E-11 TT=20.0E-9 N=1.165154849 BV=37)
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.MODEL DDG D (CJO=3.28185E-10 VJ=0.43 M=0.567966662 IS=1E-32 N=50 FC=1E-8)
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.MODEL DD1 D (CJO=0 N=1)
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.MODEL RTEMP RES (TC1=0.018525176 TC2=4.53637E-5)
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.ENDS uPA1901
