.SUBCKT uPA2210 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation        *
*         All Rights Reserved        *
*Commercial Use or Resale Restricted *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 PMOS W=2728568u L=0.41u
DDS   1  3    DDS
CGS   5  3    0.517E-11
RG    2  5    16.3
RD    1  4    RTEMP 8.5E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  0    DD1
DDG2  8  7    DD1
EGD1  9  0 8 0 1
EGD2 10  0 7 8 1
COX  10 11    9.9871E-10
DCRR 9  11    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  PMOS       PMOS  (LEVEL  = 3               TOX    = 180E-10
+ XJ     = 0.63E-6        LD     = 0                    
+ TPG    = 1              RS     = 0.5E-6         RD     = 1.3E-6
+ NSUB   = 2.33E17        IS     = 0
+ UO     = 600          
+ NFS    = 0.3E12        THETA  = 0.9
+ ETA    = 0              KAPPA  = 0.65   VMAX  = 0 
+ KP     = 1.16E-5         PHI    = 0.856
+ CGSO   = 0              CGDO   = 0               CGBO   = 0        )
*************************************************************************
.MODEL DDS D (CJO=2.05183E-10 VJ=0.43 M=0.560050656
+RS=0.026763431 IS=1.000E-10 TT=8.0E-10 N=0.962142596 BV=26.5)
*************************************************************************
.MODEL DDG D (CJO=5.3415E-10 VJ=0.43 M=0.320416376 IS=1.00E-32 N=50 FC=1E-8)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=-2.148326E-03 TC2=-7.74003E-06)
*************************************************************************
.ENDS uPA2210
