.SUBCKT uPA2750 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation        *
*         All Rights Reserved        *
*Commercial Use or Resale Restricted *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=2412819u  L=0.55u
DDS   3  1    DDS
CGS   5  3    2.8E-10
RG    2  5    2.22
RD    1  4    RTEMP 1.0E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    5.23376E-10
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3            TOX    = 500E-10
+ XJ     = 0.75u        LD     = 0.0
+ TPG    = 1            RS     = 3.8e-3         RD     = 0.002104478
+ NSUB   = 7.0E16       IS     = 0              VTO = 2.8
+ UO     = 500          KAPPA  = 0.1     
+ NFS    = 6E11        THETA  = 0.45
+ ETA    = 0.0            
+ KP     = 2.2E-5       PHI    = 0.61
+ CGSO   = 0            CGDO   = 0              CGBO   = 0)
*************************************************************************
.MODEL DDS D (CJO=9.67396E-10 VJ=0.782763961 M=0.474141218
+RS=0.007261265 IS=2.000E-10 TT=17.4E-9 N=1.22057819 BV=39.5)
*************************************************************************
.MODEL DDG D (CJO=4.63293E-10 VJ=0.572679726 M=0.453010826 IS=1.00E-32 N=50 FC=1E-8)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.015939473 TC2=4.52276E-5)
*************************************************************************
.ENDS uPA2750
