.SUBCKT uPA2793_N 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation        *
*         All Rights Reserved        *
*Commercial Use or Resale Restricted *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=6033404u L=0.45u
DDS   3  1    DDS
CGS   5  3    0.446E-9
RG    2  5    2.1
RD    1  4    RTEMP 0.0001
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    1.335732E-9
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3              TOX    = 500E-10
+ XJ     = 1.25E-6        LD     = 0                  
+ TPG    = 1              RS     = 0.002          RD     = 0.0005
+ NSUB   = 2.0E17        IS     = 0
+ UO     = 600            VMAX   = 0              KAPPA  = 0.2    
+ NFS    = 1.1E12        THETA  = 0.7
+ KP     = 6.7E-6        PHI    = 1.1
+ CGSO   = 0              CGDO   = 0              CGBO   = 0      )
*************************************************************************
.MODEL DDS D (CJO=5.36288E-10 VJ=0.776053721 M=0.539844259
+RS=0.007371505 IS=6.980E-12 TT=15E-9 N=1.055341773 BV=48)
*************************************************************************
.MODEL DDG D (CJO=1.01656E-9 VJ=0.43 M=0.558800839
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=-0.0291795594258934 TC2=-1.36345605604909E-05)
*************************************************************************
.ENDS uPA2793_N

---------------------------------------------------------------------------

.SUBCKT uPA2793_P 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation        *
*         All Rights Reserved        *
*Commercial Use or Resale Restricted *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 PMOS W=7027125u L=0.46u
DDS   1  3    DDS
CGS   5  3    0.08E-9
RG    2  5    15
RD    1  4    RTEMP 0.001
FGD   1  5    VFGD 1
EVGD  7  0 1 5 1
DDG1  8  0    DD1
DDG2  8  7    DD1
EGD1  9  0 8 0 1
EGD2 10  0 7 8 1
COX  10 11    11.956E-10
DCRR 9  11    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  PMOS       PMOS  (LEVEL  = 3               TOX    = 440E-10
+ XJ     = 0.68E-6       LD     = 0                    
+ TPG    = 1              RS     = 0.0003         RD     = 0.007
+ NSUB   = 1.10E17        IS     = 0               UO     = 600
+ NFS    = 1.0E12        THETA  = 1.1
+ ETA    = 0              KAPPA  = 0.8
+ KP     = 6.5E-6         PHI    = 1.3
+ CGSO   = 0              CGDO   = 0               CGBO   = 0        )
*************************************************************************
.MODEL DDS D (CJO=3.38664E-10 VJ=0.849129132 M=0.540516437
+RS=0.009289547 IS=1.737E-11 TT=29E-9 N=1.126075752 BV=55)
*************************************************************************
.MODEL DDG D (CJO=5.883E-10 VJ=1.298836 M=0.3823
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.0187020770488892 TC2=4.96773042860291E-06)
*************************************************************************
.ENDS uPA2793_P
