.SUBCKT uPA502T 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation        *
*         All Rights Reserved        *
*Commercial Use or Resale Restricted *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 NMOS W=3612u L=2.04u
DDS   3  1    DDS
CGS   5  3    8.580E-12
RG    2  5    2100
RD    1  4    RTEMP 6015E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  7    DD1
DDG2  8  0    DD1
EGD1  9  0 7 8 1
EGD2 10  0 8 0 1
COX  10 11    3.69073E-11
DCRR 11  9    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 3              TOX    = 500E-10
+ XJ     = 1.20E-6        LD     = 0                  
+ TPG    = 1              RS     = 206E-3         RD     = 7000E-3
+ NSUB   = 0.95E17        IS     = 0
+ UO     = 600            VMAX   = 0          
+ NFS    = 0.8E10         THETA  = 0.1
+ KP     = 60.0E-6        PHI    = 0.67
+ CGSO   = 0              CGDO   = 0              CGBO   = 0        )
*************************************************************************
.MODEL DDS D (CJO=1.4526772E-11 VJ=1.4402346 M=0.314503357  XTI=1E-12 
+RS=0.970038148 IS=7.617772E-14 TT=17.3E-9 N=1.08262709 BV=120 EG=0.8)
*************************************************************************
.MODEL DDG D (CJO=3.01411725E-12 VJ=0.43 M=0.022636051
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.011294135 TC2=5.4768207225E-05)
*************************************************************************
.ENDS uPA502T
