.SUBCKT uPA503T 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation        *
*         All Rights Reserved        *
*Commercial Use or Resale Restricted *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 PMOS W=3612u L=2.04u
DDS   1  3    DDS
CGS   5  3    1.049E-11
RG    2  5    2100
RD    1  4    RTEMP 20.0647
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  0    DD1
DDG2  8  7    DD1
EGD1  9  0 8 0 1
EGD2 10  0 7 8 1
COX  10 11    4.26065E-12
DCRR 9  11    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  PMOS       PMOS  (LEVEL  = 3               TOX    = 500E-10
+ XJ     = 1.20E-6        LD     = 0                    
+ TPG    = 1              RS     = 206E-3          RD     = 15
+ NSUB   = 0.80E17        IS     = 0
+ UO     = 600          
+ NFS    = 0.15E12        THETA  = 0
+ KP     = 12.0E-6        PHI    = 0.80
+ CGSO   = 0              CGDO   = 0               CGBO   = 0        )
*************************************************************************
.MODEL DDS D (CJO=1.44369528E-11 VJ=2.98100346 M=0.56674906 XTI=1E-12
+RS=1.332252 IS=9.9995093E-11 TT=17.3E-9 N=1.565458 BV=128)
*************************************************************************
.MODEL DDG D (CJO=1.543685764E-12 VJ=0.43471064 M=0.387040996
+IS=1.00E-32 N=50 FC=1.00E-08)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.014585239 TC2=9.74994535E-06)
*************************************************************************
.ENDS uPA503T
