.SUBCKT uPA650TT 1 2 3
**************************************
*      Model Generated by Renesas Electronics Corporation        *
*         All Rights Reserved        *
*Commercial Use or Resale Restricted *
**************************************
* Model generated on December 1, 2000
* MODEL FORMAT: SPICE2G.6
* POWER MOSFET Model (Version 3.1)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
***************************************
M1  4 5 3 3 PMOS W=842590.56u L=0.35u
DDS   1  3    DDS
CGS   5  3    1.811E-10
RG    2  5    205
RD    1  4    RTEMP 4.504204E-3
FGD   1  5 VFGD 1
EVGD  7  0 1 5 1
DDG1  8  0    DD1
DDG2  8  7    DD1
EGD1  9  0 8 0 1
EGD2 10  0 7 8 1
COX  10 11    7.8732E-10
DCRR 9  11    DDG
VFGD 11  0    0
**************************************************************************
.MODEL  PMOS       PMOS  (LEVEL  = 3               TOX    = 180E-10
+ XJ     = 0.915E-6       LD     = 0                    
+ TPG    = 1              RS     = 18.65E-3        RD     = 9.0E-3
+ NSUB   = 2.60E17        IS     = 0
+ UO     = 600          
+ NFS    = 0.28E12        THETA  = 0.00
+ ETA    = 0              KAPPA  = 1.0
+ KP     = 14.0E-6        PHI    = 0.89
+ CGSO   = 0              CGDO   = 0               CGBO   = 0        )
*************************************************************************
.MODEL DDS D (CJO=1.20267E-10 VJ=4 M=0.638314091
+RS=0.023116872 IS=7.558E-12 TT=3200E-9 N=1.115258181 BV=21)
*************************************************************************
.MODEL DDG D (CJO=2.23833E-10 VJ=1.436919455 M=0.425679757 IS=1E-32 N=50 FC=1E-8)
*************************************************************************
.MODEL DD1 D (CJO=0 N=1)
*************************************************************************
.MODEL RTEMP RES (TC1=0.024373477 TC2=7.16642E-5)
*************************************************************************
.ENDS uPA650TT
