Renesas' 8th-generation insulated-gate bipolar transistors (IGBTs) use an exclusive trench gate configuration in the process structure. These devices provide faster switching performance compared to previous IGBT generations. They also reduce conduction losses by decreasing the saturation voltage.
Our 1800V - 400A/200A IGBTs are optimized for high-power applications such as wind power generation and solar inverters.
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Datasheet | PDF 311 KB | |
Brochure | PDF 8.73 MB | |
Application Note | PDF 1.11 MB 日本語 | |
Application Note | PDF 648 KB 日本語 | |
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