概览

The NP100N055MDH, NP100N055NDH, NP100N055PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.

  • Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
  • Super low on-state resistance NP100N055MDH, NP100N055NDH RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 50 A) RDS(on)2 = 6.6 mΩ MAX. (VGS = 4.5 V, ID = 50 A) NP100N055PDH RDS(on)1 = 4.4 mΩ MAX. (VGS = 10 V, ID = 50 A) RDS(on)2 = 6.2 mΩ MAX. (VGS = 4.5 V, ID = 50 A)
  • High avalanche energy, High avalanche current
  • Logic level drive Type
  • Low input capacitance Ciss = 9500 pF TYP. (VDS = 25 V)

文档

= 相关文档
类型 文档标题 日期
数据手册
NP100N055MDH, NP100N055NDH, NP100N055PDH Datasheet
PDF 357 KB
指南
Power Devices Part Number Guide
PDF 1.71 MB
手册
Power MOSFET & IPD
PDF 2.24 MB
3 items

设计和开发

ECAD 模块

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扩展 ECAD 模块
Diagram of ECAD Models

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    NP100N055MDH
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