概览

简介

These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.

特性

  • Channel temperature 175 degree rated
  • Super low on-state resistance RDS(on) = 19 mΩ MAX. (VGS = 10 V, ID = 17 A)
  • Low Ciss : Ciss = 1600 pF TYP.
  • Built-in gate protection diode

产品对比

应用

文档

类型 文档标题 日期
数据手册 PDF 288 KB
指南 PDF 1.71 MB
手册 PDF 2.24 MB
3 items

设计和开发

模型