Renesas' 8th-generation insulated-gate bipolar transistors (IGBTs) use an exclusive trench gate configuration in the process structure. These devices provide faster switching performance compared to previous IGBT generations. They also reduce conduction losses by decreasing the saturation voltage.
Our 1800V - 200A/100A IGBTs are optimized for high-power applications such as wind power generation and solar inverters.
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类型 | 文档标题 | 日期 |
数据手册 | PDF 134 KB | |
手册 | PDF 8.73 MB | |
应用文档 | PDF 1.11 MB 日文 | |
应用文档 | PDF 648 KB 日文 | |
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Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
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