通过采用氮化镓器件和技术，实现瑞萨电子电源产品组合的转型。
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访问新闻稿“ 瑞萨完成对 Transphorm 的收购 ”（2024 年 6 月 20 日）
当今的电源系统在很多应用场景中对效率和功率密度的要求越来越高，所需的电压范围和开关频率也需要比传统的硅基器件更大和更快。 宽带隙器件不仅在销量方面增长显著，而且在满足当今复杂电源系统的需求方面具有独特优势。
瑞萨电子在电源产品中战略性地采用Transphorm的氮化镓技术和器件，可为客户提供更为丰富的产品，从而成为行业中产品最全面的公司之一。 瑞萨电子现有的分立器件产品组合包括IGBT、碳化硅和硅功率FET，现在又增加了氮化镓器件，为客户的系统设计极大地提高了灵活性。 Transphorm的氮化镓技术具有独特性和差异性，并且基于单核平台垂直集成模式，可满足当今市场上各种应用产品的功率转换需求，且支持的产品和功率范围是目前最宽广的（45W至10+kW）。 与同类氮化镓产品相比，本产品采用自己的晶片工艺，可使其损耗/性能改善25%，这是它的另一个主要优势。 具有行业领先的知识产权，获得1000多项专利，这些专利涉及从EPI材料、封装到应用的整个氮化镓价值链，进一步推动了产品差异化和客户创新的实现。
为了满足客户在汽车、工业、可再生能源和消费领域日益增长的需求，瑞萨电子现已在各种电源管理解决方案中将所有宽带隙产品（包括采用垂直集成晶圆制造工艺的尖端氮化镓产品）与业界最佳的控制器和驱动器集成电路相结合，进一步完善了这些解决方案。
Processing table
Subcategory |
Key Features |
应用 |
Lead Count (#) |
Pkg. Type |
Temp. Range |
Qualification Level |
105°C Max. Case Temp. |
|
|---|---|---|---|---|---|---|---|---|
| 器件号 | ||||||||
| 80V 双同步降压控制器已优化，可驱动 E 型 GaN FET | Buck Controllers (External FETs) | Automotive electronics, Industrial equipment, Power systems and more... |
32 | TQFN | -40 to +125°C | Standard | ||
| 优化 80V 双通道或双相同步升压控制器，可驱动 E 型 GaN 场效应管 | Boost Controllers (External FETs) | Automotive electronics, Industrial equipment, Power systems and more... |
32 | TQFN | -40 to +125°C | Standard | ||
| 40V, 65A Enhancement Mode GaN Power Transistor | Rad Hard GaN FETs | Down hole drilling, High reliability industrial and more... |
4 | CLCC, PFL | -55 to +125°C | Modified Class V, PROTO | ||
| 100V, 60A Enhancement Mode GaN Power Transistor | Rad Hard GaN FETs | Down hole drilling, High reliability industrial and more... |
4 | CLCC | -55 to +125°C | Modified Class V, PROTO | ||
| 200V, 7.5A Enhancement Mode GaN Power Transistor | Rad Hard GaN FETs | Down hole drilling, High reliability industrial and more... |
4 | CLCC, PFL | -55 to +125°C | Modified Class V, PROTO | ||
| 数字同步整流控制器 采用高侧和低侧整流配置 优化磁性元件 | AC/DC & Isolated DC/DC Converters and more... |
Auxiliary Power Supplies in Servers, Appliances and Desktops and more... |
6 | SOT23-6L | -40 to +150°C | Standard | ||
| 数字同步整流器 | Secondary-side ICs and RapidCharge Protocol ICs | Compact AC/DC adaptors/Chargers | 6 | SOT23-6L | -40 to +150°C | Standard | ||
| Secondary-Side USB Power Delivery 3.1 Protocol and Interface IC for Single and Multi-port Adapters up to 240W | Secondary-side ICs and RapidCharge Protocol ICs | Single-Port and Multi-Port RapidCharge™ AC/DC Chargers | 14 | TDFN-16L | -40 to +150°C | Standard | ||
| Digital Constant-Voltage Offline PWM Controller with Power Factor Correction for 100W+ Applications | Solid State Lighting Driver ICs | Constant Voltage Control, PrimAccurate | Adapters, Chargers, Monitor Power Supplies and more... |
6 | SOT23-6L | -40 to +125°C | Standard | |
| 100W 数字零电压开关 RapidCharge™ AC/DC 控制器 | AC/DC & Isolated DC/DC Converters, Flyback & Forward Controllers | Adapters, Chargers, PSUs, Power Tools | 10 | SOIC-10 | -40 to +125°C | Standard | ||
| 100W 数字零电压开关 RapidCharge™ AC/DC 控制器 | AC/DC & Isolated DC/DC Converters, Flyback & Forward Controllers | Adapters, Chargers, Networking, PSUs, Power Tools | 10 | SOIC-10 | -40 to +125°C | Standard | ||
| GaN Digital Quasi-Resonant AC/DC Flyback Controller for Zero Standby Power RapidCharge Power Supplies up to 140W | Flyback & Forward Controllers | Adapters, Chargers, In-Wall Power Outlets, Networking, PSUs and more... |
6 | SOT23-6L | -40 to +125°C | Standard | ||
| Low-Side GAN FET Driver with Programmable Source Current and Adjustable Overcurrent Protection | GaN FET Drivers | Optimized to drive enhancement mode GaN FETs and more... |
GaN FET driver application, Switching-mode power supply | 16 | QFN | -40°C to +125°C | Standard | |
| Critical Conduction Mode Interleave PFC Control IC | Power Factor Correction (PFC) Controllers | PSUs | 20 | SOP | -40 to +125°C | Standard | ||
| Critical Conduction Mode PFC Control IC | Power Factor Correction (PFC) Controllers | Achieves high efficiency and low switching noise and more... |
AC/DC adapters, Electronic ballasts, Medium off-line power converters | 8 | SOP | -40 to +125°C | Standard | |
| 采用 TO-247 封装的 650V 15mΩ SuperGaN FET | GaN Power Discretes | 3 | TO-247 | -55 to +150°C | Standard | |||
| 650V 35mΩ SuperGaN FET 封装 TOLL | GaN Power Discretes | TOLL | -55 to +150°C | Standard | ||||
| 采用 TO-247 封装的 650V 35mΩ SuperGaN FET | GaN Power Discretes | 3 | TO-247 | -55 to +150°C | Standard | |||
| 符合 AEC-Q101 标准的 650V 35mΩ SuperGaN FET 采用 TO-247 封装 | GaN Power Discretes | 3 | TO-247 | -55 to +150°C | Automotive | |||
| 采用 TO-263 封装的 650V 50mΩ SuperGaN FET （D2-PAK） | GaN Power Discretes | 3 | TO-263 | -55 to +150°C | Standard | |||
| 采用 TO-247 封装的 650V 50mΩ SuperGaN FET | GaN Power Discretes | 3 | TO-247 | -55 to +150°C | Standard | |||
| 采用 PQFN88 封装的 650V 72mΩ SuperGaN FET | GaN Power Discretes | PQFN88 | -55 to +150°C | Standard | ||||
| 采用 PQFN88 封装的 650V 72mΩ SuperGaN FET | GaN Power Discretes | PQFN88 | -55 to +150°C | Standard | ||||
| 采用 TO-220 封装的 650V 70mΩ SuperGaN FET | GaN Power Discretes | 3 | TO-220 | -55 to +150°C | Standard | |||
| 650V 72mΩ SuperGaN FET 封装 TOLT 封装 | GaN Power Discretes | 16 | TOLT | -55 to +150°C | Standard | |||
| 采用 TO-247-4 封装的 650V 35mΩ SuperGaN FET | GaN Power Discretes | 3 | TO-247 | -55 to +150°C | Standard | |||
| 650V 50mΩ SuperGaN FET TOLL 封装 | GaN Power Discretes | TOLL | -55 to +150°C | Standard | ||||
| 采用 TO247-4 封装的 650V 50mΩ SuperGaN FET | GaN Power Discretes | 4 | TO-247-4L | -55 to +150°C | Standard | |||
| 采用 TOLL 封装的 650V 72mΩ SuperGaN FET | GaN Power Discretes | 8 | TOLL | -55 to +150°C | Standard | |||
| 650V 92mΩ SuperGaN FET in PQFN88 | GaN Power Discretes | PQFN88 | -55 to +150°C | Standard | ||||
| 650V 92mΩ SuperGaN FET in TO-220 | GaN Power Discretes | 3 | TO-220 | -55 to +150°C | Standard | |||
| 采用 PQFN56 封装的 650V 240mΩ SuperGaN FET | GaN Power Discretes | PQFN56 | -55 to +150°C | Standard | ||||
| 采用 PQFN88 封装的 650V 240mΩ SuperGaN FET | GaN Power Discretes | PQFN88 | -55 to +150°C | Standard | ||||
| 采用 PQFN56 封装的 50V 480mΩ SuperGaN FET | GaN Power Discretes | PQFN56 | -55 to +150°C | Standard | ||||
| 采用 PQFN56 封装的 650V 150mΩ SuperGaN FET | GaN Power Discretes | PQFN56 | -55 to +150°C | Standard | ||||
| 采用 PQFN88 封装的 650V 150mΩ SuperGaN FET | GaN Power Discretes | PQFN88 | -55 to +150°C | Standard | ||||
| 采用 TO-220 封装的 650V 150mΩ SuperGaN FET | GaN Power Discretes | 3 | TO-220 | -55 to +150°C | Standard | |||
| 采用 PQFN88 封装的 650V 240mΩ SuperGaN FET | GaN Power Discretes | PQFN88 | -55 to +150°C | Standard |
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