概览

The RJH65T14DPQ-A0 650V, 50A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for induction heating and microwave oven applications. It is available in a TO-247A package type.

  • Optimized for current resonance application
  • Low collector to emitter saturation voltage VCE(sat) = 1.45V typ. (at IC = 50A, VGE = 15V, Ta = 25 °C)
  • Built-in fast recovery diode in one package
  • Trench gate and thin wafer technology

应用

  • Induction heating
  • Microwave ovens

文档

设计和开发

ECAD 模块

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

扩展 ECAD 模块
Diagram of ECAD Models

产品选择

    Processing table
    Pkg. Type
    Carrier Type
    购买 / 样片
    器件号
    RJH65T14DPQ-A0#T0
    circle有效
    memory
    view_in_ar
    可提供样片
    		 TO-247A Tube 获取样片,
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