The HM-6514/883 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays. Gated inputs allow lower operating current and also eliminates the need for pull up or pull down resistors. The HM-6514/883 is fully static RAM and may be maintained in any state for an indefinite period of time. Data retention supply voltage and supply current are guaranteed over temperature.
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类型 | 文档标题 | 日期 |
数据手册 | PDF 342 KB | |
手册 | PDF 4.85 MB | |
产品变更通告 | PDF 323 KB | |
End Of Life Notice | PDF 200 KB | |
Product Advisory | PDF 282 KB | |
产品变更通告 | PDF 174 KB | |
产品变更通告 | PDF 151 KB | |
应用文档 | PDF 338 KB | |
应用文档 | PDF 224 KB | |
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