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概览

描述

The radiation hardened IS-2100ARH, IS-2100AEH are high-frequency, 130V half-bridge N-Channel MOSFET driver ICs, which are functionally similar to industry-standard 2110 types. The low-side and high-side gate drivers are independently controlled. This gives the user maximum flexibility in dead time selection and driver protocol. In addition, the devices have on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the HIN signal. If they disagree, a set or reset pulse is generated to correct the high-side latch. This feature protects the high-side latch from single event upsets (SEUs).

特性

  • Electrically screened to DLA SMD # 5962-99536
  • QML qualified per MIL-PRF-38535 requirements
  • Radiation environment
  • Maximum total dose: 300krad(Si)
  • DI RSG process provides latch-up immunity
  • SEU rating: 82MeV/mg/cm2
  • Vertical device architecture reduces sensitivity to low dose rates
  • Bootstrap supply maximum voltage to 150V
  • Drives 1000pF load at 1MHz with rise and fall times of 30ns (typical)
  • 1.5A (typical) peak output current
  • Independent inputs for non-half bridge topologies
  • Low DC power consumption: 60mW (typical)
  • Operates with VDD = VCC over 12V to 20V range
  • Low-side supply undervoltage protection

产品对比

应用

  • High-frequency switch-mode power supplies
  • Drivers for inductive loads
  • DC motor drivers

文档

类型 文档标题 日期
数据手册 PDF 252 KB
宣传手册 PDF 467 KB
涨价通告 PDF 360 KB
其他
报告 PDF 386 KB
报告 PDF 357 KB
报告 PDF 171 KB
应用笔记 PDF 338 KB
应用笔记 PDF 224 KB
9 items

设计和开发

模型

ECAD 模块

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Diagram of ECAD Models

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