概览
描述
The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0. 01nA.
特性
- High Gain-Bandwidth Product (fT) 10GHz
- High Power Gain-Bandwidth Product 5GHz
- High Current Gain (hFE) 70
- Noise Figure (Transistor) 3.5dB
- Low Collector Leakage Current <0.01nA
- Excellent hFE and VBE Matching
- Pin-to-Pin to UPA102G
- Pb-Free Plus Anneal Available (RoHS Compliant)
产品对比
应用
设计和开发
模型
ECAD 模块
点击产品选项表中的 CAD 模型链接，查找 SamacSys 中的原理图符号、PCB 焊盘布局和 3D CAD 模型。如果符号和模型不可用，可直接在 SamacSys 请求该符号或模型。
产品选项
当前筛选条件